In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27

Model NO.
1N5408
Luminous Intensity
Standard
Color
Black
Structure
Planar
Material
Silicon
Transport Package
by Sea. Packaging
Specification
DO-201AD / D0-27
Trademark
ZG
Origin
Anhui, Province, China
HS Code
8541100000
Package Size
395.00cm * 360.00cm * 250.00cm
Package Gross Weight
13.000kg
Reference Price
$ 11.34 - 12.60
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Product Description

 
Product Description

In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27 In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27

Detailed Photos

In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27 In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27 In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27 In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27 In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27 In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27 In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27 In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27 In5408 1000V Axial Diode 3A General Purpose Rectifier Diode 1n5408 Do-27

 
Symbols 		1N
5400 		1N
5401 		1N
5402 		1N
5403 		1N
5404 		1N
5405 		1N
5406 		1N
5407 		1N
5408
Units
Maximum repetitive peak reverse voltage V RMM 50 100 200 300 400 500 600 800 1000 Volts
Maximum RMS voltage V RMS 35 70 140 210 280 350 420 560 700 Volts
Maximum DC blocking voltage V DC 50 100 200 300 400 500 600 800 1000 Volts
Maximum Average Forward Rectified Current @TA=55 ºC I (AV) 3.0 Amps
Peak Forward Surge Current
8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC
I FSM
200.0
Amps
Method)
Maximum forward voltage at 3.0A DC 		V F 1.0 Volts
Maximum DC reverse current T J =25 ºC at rated DC blocking voltage T J =100 ºC I R 5.0
50 		μA
Typical junction capacitance (Note 1) C J 50.0 35.0 pF
Typical thermal resistance (Note 2) R θJA 15.0 ºC/W
Operating Temperature Range T J -55 to +150 ºC
Storage Temperature Range T STG -55 to +150 ºC


Anhui Zhongxin Semiconductor Co., Ltd. was established in 2010 and covers an area of 20000 square meters, which is located in Anhui Province, near Shanghai. Our company is focus on the development and production of diode, rectifier diode, mosfet, schottky diode, fast recovery diode, bridge rectifier, silicon wafer, etc. Our mission is to be the most valuable semiconductor supplier beside you. Welcome to contact us for future business relationships and mutual success.




FAQ:

1, Are you Manufacturer or trading company?
We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with prompt service, we guarantee that we will reply to our customers within 1-12H once we receive the inquiry, we will do the utmost to help to cut down your cost. 
AND ZG WILL LIKE TO ASSURE ALL THE CUSTOMERS THAT WHATEVER IS WRITTEN ON THE LABEL OF THE PRODUCT IS 100% TRUE

2. May I have some samples for testing? 
Yes, OF COURSE. We offer free samples for our customers and they only need to pay the freight for samples. If you have order with us, we will deduct the freight from your first order. 

3. What about the delivery ? 
Usually the lead time is about 1-3 weeks after receiving payment. For many normal parts, we have the quantity in stock and we have the system to ensure the delivery will be on time. 

4. What about the payment terms ?
Order amount is less than $10000: 80% Advance,and 20% before shipment.
Order amount is between $10000 and $20000: 50% Advance and 50% before shipment.
Order amount is more than $20000: 30% Advance and 70% before shipment.

5. What about the shipment terms ? 
FOB Shanghai by sea;        

 

Rectifier Diode

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