7.5A 600V N-Channel Enhancement Mode Power Mosfet F8n60 to-220f

Model NO.
F8n60
Batch Number
2023
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Reference Price
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Product Description

7.5A 600V N-Channel Enhancement Mode Power Mosfet F8n60 to-220f 7.5A 600V N-Channel Enhancement Mode Power Mosfet F8n60 to-220f 7.5A 600V N-Channel Enhancement Mode Power Mosfet F8n60 to-220f 7.5A 600V N-Channel Enhancement Mode Power Mosfet F8n60 to-220f
Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
 
PARAMETER SYMBOL VALUE UNIT
8N60/I8N60/E8N60/B8N60/D8N60 F8N60  
Maximum Drian-Source DC Voltage V DS 600 V
Maximum Gate-Drain Voltage V GS ±30 V
Drain Current(continuous) I D (T=25ºC) 7.5 A
(T=100ºC) 4.8 A
Drain Current(Pulsed) I DM 30 A
Single Pulse Avalanche Energy E AS 400 mJ
Peak Diode Recovery dv/dt dv/dt 5 V/ns
Total Dissipation Ta=25ºC Ptot 2 2 W
TC=25ºC Ptot 100 35 W
Junction Temperature T j 150 ºC
storage Temperature T stg -55~150 ºC
 
Features
Fast Switching
ESD Improved Capability
Low ON Resistance(Rdson≤1.3Ω)
Low Gate Charge(Typ: 24nC)
Low Reverse Transfer Capacitances(Typ: 5.5pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
 
Applications
used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of electron ballast and adaptor.
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
8N60 TO-220C 8N60 Pb-free Tube 1000/box
F8N60 TO-220F F8N60 Pb-free Tube 1000/box
B8N60 TO-251 B8N60 Pb-free Tube 3000/box
D8N60 TO-252 D8N60 Pb-free Tape & Reel 2500/box
I8N60 TO-262 I8N60 Pb-free Tube 1000/box
E8N60 TO-263 E8N60 Pb-free Tape & Reel 800/box

 

Semiconductor

SUPERAUTO.CAT, 2023